This device is a silicon-glass PIN diode chip fabricated with M/A-COM Technology Solutions patented HMIC process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls conductive. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.
技术特性 Features
订购信息 Ordering Information
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应用领域ApplicationsThese packageless devices are suitable for usage in Moderate Incident Power ( 5 W C.W. ) or Higher Incident Peak Power ( 200 W, 1 uS, 0.001 Duty ), Shunt, or-Shunt Switches. Small Parasitic Inductance, 0.7 nH, and Excellent RC Constant, 0.20 pS, make the devices ideal for TR Switch and Accessory Switch Circuits, where higher P1db and IP3 values are required. These diodes can also be used in π, T, Tapered Resistance, and Switched-Pad Attenuator Control Circuits for 50Ω or 75Ω systems |
| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
|---|---|---|
| MA4SPS552 数据资料DataSheet下载.PDF | Rev.V2 | 2 页 |
| MA4SPS552:S 参数 | 4K |
