MRF10005 Microwave Power Silicon Bipolar Transistor 5.0 W, 960–1215 MHz, 28V

Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles.

技术特性 Features
  • Guaranteed performance @1.215GHz, 28Vdc
  • Output power: 5.0W CW
  • Minimum gain = 8.5dB, 10.3dB (Typ.)
  • RF performance curves for 28 Vdc and 36 Vdc operation
  • 100% tested for load mismatch at all phase angles with 10:1 VSWR
  • Hermetically sealed industry standard package
  • Silicon nitride passivated
  • Gold metallized, emitter ballasted for long life and resistance to metal migration
  • Internal input matching for broadband operation

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF10005数据资料DataSheet下载:PDF Rev.V2 3页