MRF1090MB Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

技术特性 Features
  • Guaranteed performance @ 1090 MHz, 50 Vdc
    Output power = 90 W Peak
    Minimum gain = 8.4 dB
  • 100% tested for load mismatch at all phase angles with 10:1 VSWR
  • Industry standard package
  • Nitride passivated
  • Gold metallized for long life and resistance to metal migration
  • Internal input matching for broadband operation

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF1090MB数据资料DataSheet下载:PDF Rev.V2 3页