MRF151 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

技术特性 Features

Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
Output Power — 150 W
Gain — 13 dB
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability

应用技术支持与电子电路设计开发资源下载	版本信息	大小
MRF151数据资料DataSheet下载：PDF	Rev.V2	3页

MRF151 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET

技术特性 Features

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