MRF151A RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
技术特性 Features
- Enhanced thermal performance
- Higher power dissipation
Guaranteed Performance at 30 MHz, 50 V:
- Output Power — 150 W
- Gain — 18 dB (22 dB Typ)
- Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
- Output Power — 150 W
- Gain — 13 dB
- Low Thermal Resistance
- Ruggedness Tested at Rated Output Power
- Nitride Passivated Die for Enhanced Reliability
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