MRF275G The RF MOSFET Line 150W, 500MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.

技术特性 Features
  • Guaranteed performance @ 500 MHz, 28 Vdc
    Output power — 150 W
    Power gain — 10 dB (min.)
    Efficiency — 50% (min.)
  • 100% tested for load mismatch at all phase angles
    with VSWR 30:1
  • Overall lower capacitance @ 28 V
    Ciss — 135 pF
    Coss — 140 pF
    Crss — 17 pF
  • Simplified AVC, ALC and modulation
    Typical data for power amplifiers in industrial and
    commercial applications:
  • Typical performance @ 400 MHz, 28 Vdc
    Output power — 150 W
    Power gain — 12.5 dB
    Efficiency — 60%
  • Typical performance @ 225 MHz, 28 Vdc
    Output power — 200 W
    Power gain — 15 dB
    Efficiency — 65%

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF275G数据资料DataSheet下载:PDF Rev.V2 3页