MRF321 The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

技术特性 Features
  • Guaranteed performance at 400 MHz, 28 Vdc
    Output power = 10 W
    Power gain = 12 dB min.
    Efficiency = 50% min.
  • 100% tested for load mismatch at all phase angles with 30:1 VSWR
  • Gold metallization system for high reliability
  • Computer–controlled wirebonding gives consistent input Impedance

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF321数据资料DataSheet下载:PDF Rev.V2 3页