MRF421 The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V

Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

技术特性 Features
  • Specified 12.5 V, 30 MHz characteristics —
    Output power = 100 W (PEP)
    Minimum gain = 10 dB
    Efficiency = 40%
  • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
  • 100% tested for load mismatch at all phase angles with 30:1 VSWR

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF421数据资料DataSheet下载:PDF Rev.V2 3页