MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
技术特性 Features
- Specified 28 V, 30 MHz characteristics —
Output power = 25 W (PEP)
Minimum gain = 22 dB
Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
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