MRF587 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
技术特性 Features
- Low noise figure —
NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
- High power gain —
GU(max) = 16.5 dB (typ.) @ f = 500 MHz
- Ion implanted
- All gold metal system
- High fT — 5.5 GHz
- Low intermodulation distortion:
TB3 = –70 dB
DIN = 125 dB μV
- Nichrome emitter ballast resistors
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