PH1113-100 Radar Pulsed Power Transistor 100W, 1.1-1.3 GHz, 3μs Pulse, 30% Duty

技术特性 Features
  • NPN silicon microwave power transistors
  • Common base configuration
  • Broadband Class C operation
  • High efficiency inter-digitized geometry
  • Diffused emitter ballasting resistors
  • Gold metallization system
  • Internal input and output impedance matching
  • Hermetic metal/ceramic package
  • RoHS compliant

应用技术支持与电子电路设计开发资源下载 版本信息 大小
PH1113-100数据资料DataSheet下载:PDF Rev.V2 3页