PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100μs Pulse, 10% Duty

技术特性 Features
  • NPN silicon microwave power transistors
  • Common base configuration
  • Broadband Class C operation
  • High efficiency inter-digitized geometry
  • Diffused emitter ballasting resistors
  • Gold metallization system
  • Internal input and output impedance matching
  • Hermetic metal/ceramic package
  • RoHS compliant

应用技术支持与电子电路设计开发资源下载 版本信息 大小
PH3134-10M数据资料DataSheet下载:PDF Rev.V2 3页