UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

技术特性 Features
  • N-channel enhancement mode device
  • DMOS structure
  • Lower capacitances for broadband operation
  • High saturated output power
  • Lower noise figure than competitive devices
  • RoHS Compliant

应用技术支持与电子电路设计开发资源下载 版本信息 大小
UF28100M数据资料DataSheet下载:PDF Rev.V2 3页