XB1005-BD Buffer Amplifier 35.0-45.0 GHz

M/A-COM Tech’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.

技术特性 Features
  • High Dynamic Range
  • Excellent LO Driver/Buffer Amplifier
  • Low Noise or Power Bias Configurations
  • 23.0 dB Small Signal Gain
  • 2.7 dB Noise Figure at Low Noise Bias
  • +16 dBm P1dB Compression at Power Bias
  • 100% On-Wafer RF, DC and Noise Figure Testing
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
  • RoHS* Compliant and 260°C Reflow Compatible
订购信息 Ordering Information
  • XB1005-BD-000V “V” - vacuum release gel paks
  • XB1005-BD-EV1 evaluation module

应用技术支持与电子电路设计开发资源下载 版本信息 大小
XB1005-BD 数据资料DataSheet下载:PDF Rev.V2 2 页
XB1005-BD:S 参数   17K