XB1007-BD Buffer Amplifier 4.0-11.0 GHz
M/A-COM Tech’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
技术特性 Features
- Excellent Transmit LO/Output Buffer Stage
- Compact Size
- 23.0 dB Small Signal Gain
- +20.0 dBm P1dB Compression Point
- 4.5 dB Noise Figure
- Variable Gain with Adjustable Bias
- 100% On-Wafer RF, DC and Output Power Testing
- 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
- RoHS* Compliant and 260°C Reflow Compatible
|
订购信息 Ordering Information
- XB1007-BD-000V “V” - vacuum release gel paks
- XB1007-BD-EV1 evaluation module
|
