XP1018-BD 37.0-42.0 GHz GaAs MMIC Power Amplifier

Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

技术特性 Features
  • Excellent Transmit Output Stage
  • Output Power Adjust
  • 26.0 dB Small Signal Gain
  • +25.0 dBm P1dB Compression Point
  • 100% On-Wafer RF, DC and Output Power Testing
  • 100% Visual Inspection to MIL-STD-883 Method 2010
订购信息 Ordering Information
  • XP1018-BD-000X Where “X” is RoHS compliant die packed in “V” - vacuum release gel packs or “W” - waffle trays
  • XP1018-BD-EV1 XP1018-BD evaluation module

应用技术支持与电子电路设计开发资源下载 版本信息 大小
XP1018-BD 数据资料DataSheet下载:PDF Rev.V2 2 页