XP1027-BD Power Amplifier 27.0-31.0 GHz
M/A-COM Tech’s three stage 27.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35.5 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
技术特性 Features
- Ka-Band 4 W Power Amplifier
- Balanced Design Provides Good Input/Output Match
- 21.0 dB Small Signal Gain
- +35.5 dBm Saturated Output Power
- +43.0 dBm Output Third Order Intercept (OIP3)
- 100% On-Wafer RF, DC and Output Power Testing
- 100% Visual Inspection to MIL-STD-883 Method 2010
- RoHS* Compliant and 260°C Reflow Compatible
|
订购信息 Ordering Information
- XP1027-BD-000V “V” - vacuum release gel paks
- XP1027-BD-EV1 evaluation module
|
