BC847BV NPN general purpose double transistor
NPN double transistor in a SOT666 plastic package.
PNP complement: BC857BV
产品特点 Features
- 300 mW total power dissipation
- Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector capacitance
- Improved thermal behaviour due to flat leads
- Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
- Reduces required board space
- Reduces pick and place costs
|
应用
- General purpose switching and amplification.
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
BC847BV |
BC847BV,115 |
9340 565 35115 |
量产 |
SOT666 |
BC847BV |
BC847BV,315 |
9340 565 35315 |
量产 |
SOT666 |
BC847BV/DG |
BC847BV/DG,115 |
9340 617 38115 |
量产 |
SOT666 |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT666 |
SOT666 |
plastic surface-mounted package; 6 leads |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
BC847BV |
BC847BV,115 |
9340 565 35115 |
BC847BV |
BC847BV |
BC847BV,315 |
9340 565 35315 |
BC847BV |
BC847BV/DG |
BC847BV/DG,115 |
9340 617 38115 |
BC847BV/DG |
BC847BV 技术支持
档案名称 |
标题 |
类型 |
格式 |
BC847BV |
NPN general purpose double transistor |
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