MX0912B251Y NPN microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C
产品特点 Features
- Diffused emitter ballasting resistors providing excellent current sharing
- Gold metallization realizes very stable characteristics and excellent lifetime
- Input and output matching cell allows an easier design of circuits
- Interdigitated structure; high emitter efficiency
- Multicell geometry gives good balance of dissipated power
|
应用
- Intended for use in common base class C broadband pulse power amplifier
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
标示 |
| MX0912B251Y |
MX0912B251Y,114 |
9340 506 10114 |
量产 |
SOT439A
(CDFM2) |
Standard Marking |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT439A |
CDFM2 |
flanged hermetic ceramic package; 2 mounting holes; 2 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| MX0912B251Y |
MX0912B251Y,114 |
9340 506 10114 |
MX0912B251Y |
MX0912B251Y 技术支持
