MZ0912B50Y NPN microwave power transistors

NPN silicon planar epitaxial microwave power transistors. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It ismounted in common base configuration and specified in class C

产品特点 Features
  • Diffused emitter ballasting resistors providing excellent current sharing
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Input and output matching cell allows an easier design of circuits
  • Interdigitated structure provides high emitter efficiency
  • Multicell geometry improves power sharing and low thermal resistance
应用
  • Common base class-C broadband pulse power amplifiers
产品实物图
MZ0912B50Y 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装 标示
MZ0912B50Y MZ0912B50Y,114 9339 940 40114 量产 SOT439A (CDFM2) Standard Marking
外形图
封装版本 封装名称 封装说明
SOT439A CDFM2 flanged hermetic ceramic package; 2 mounting holes; 2 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
MZ0912B50Y MZ0912B50Y,114 9339 940 40114 MZ0912B50Y
MZ0912B50Y 技术支持
档案名称 标题 类型 格式
MZ0912B50Y NPN microwave power transistors Datasheet pdf
AN10896 Mounting and Soldering of RF transistors Application note pdf
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