PBRP123YT PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123YT
产品特点 Features
- 800 mA repetitive peak output current
- Low collector-emitter saturation voltage VCEsat
- High current gain hFE
- Reduces component count
- Built-in bias resistors
- Reduces pick and place costs
- Simplifies circuit design
- +-10 pct resistor ratio tolerance
|
应用
- Digital application in automotive and industrial segments
- Switching loads
- Medium current peripheral driver
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PBRP123YT |
PBRP123YT,215 |
9340 589 91215 |
量产 |
SOT23
(TO-236AB) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT23 |
TO-236AB |
plastic surface-mounted package; 3 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PBRP123YT |
PBRP123YT,215 |
9340 589 91215 |
PBRP123YT |
PBRP123YT 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm |
Datasheet |
pdf |
| AN10117 |
Medium Power Transistors and Rectifiers for Power Management Applications |
Application note |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
