PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package
产品特点 Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
|
应用
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
PBSM5240PF |
PBSM5240PF,115 |
9340 651 27115 |
量产 |
SOT1118
(DFN2020-6) |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT1118 |
DFN2020-6 |
plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
PBSM5240PF |
PBSM5240PF,115 |
9340 651 27115 |
PBSM5240PF |
PBSM5240PF 技术支持
档案名称 |
标题 |
类型 |
格式 |
PBSM5240PF |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Data sheet |
pdf |
LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
AN10361 |
Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board |
Application note |
pdf |
75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |