PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3515E
产品特点 Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
|
应用
- DC-to-DC conversion
- MOSFET gate driving
- Motor control
- Charging circuits
- Low power switches (e.g. motors, fans)
- Portable applications
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
PBSS2515E |
PBSS2515E,115 |
9340 591 66115 |
量产 |
SOT416
(SC-75) |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT416 |
SC-75 |
plastic surface-mounted package; 3 leads |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
PBSS2515E |
PBSS2515E,115 |
9340 591 66115 |
PBSS2515E |
PBSS2515E 技术支持
档案名称 |
标题 |
类型 |
格式 |
PBSS2515E |
15 V, 0.5 A NPN low VCEsat (BISS) transistor |
Data sheet |
pdf |
LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
AN10361 |
Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board |
Application note |
pdf |
75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |