PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3515MB
产品特点 Features
- Leadless ultra small SMD plastic package
- Low package height of 0.37 mm
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Reduced Printed-Circuit Board (PCB) requirements
|
应用
- DC-to-DC conversion
- Supply line switching
- Battery charger
- LCD backlighting
- Driver in low supply voltage applications (e.g. lamps and LEDs)
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PBSS2515MB |
PBSS2515MB,315 |
9340 658 75315 |
量产 |
SOT883B
(DFN1006B-3) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT883B |
DFN1006B-3 |
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PBSS2515MB |
PBSS2515MB,315 |
9340 658 75315 |
PBSS2515MB |
PBSS2515MB 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PBSS2515MB |
15 V, 0.5 A NPN low VCEsat (BISS) transistor |
Data sheet |
pdf |
| AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
| AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
| 75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
