PBSS4032SPN 30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor
NPN /PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) Surface-Mounted Device (SMD) plastic package
产品特点 Features
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Low collector-emitter saturation voltage VCEsat
- Optimized switching time
- Smaller required PCB area than for conventional transistors
|
应用
- Battery-driven devices
- Charging circuits
- DC-to-DC conversion
- Power management
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
PBSS4032SPN |
PBSS4032SPN,115 |
9340 634 17115 |
量产 |
SOT96-1
(SO8) |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT96-1 |
SO8 |
plastic small outline package; 8 leads; body width 3.9 mm |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
PBSS4032SPN |
PBSS4032SPN,115 |
9340 634 17115 |
PBSS4032SPN |
PBSS4032SPN 技术支持
档案名称 |
标题 |
类型 |
格式 |
PBSS4032SPN |
30 V NPN/PNP low V_CEsat (BISS) transistor |
Data sheet |
pdf |
AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |