PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ

产品特点 Features
  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified
  • Smaller required PCB area than for conventional transistors
应用
  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
产品实物图
PBSS4041NZ 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4041NZ PBSS4041NZ,115 9340 633 95115 量产 SOT223 (SC-73)
外形图
封装版本 封装名称 封装说明
SOT223 SC-73 plastic surface-mounted package with increased heatsink; 4 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4041NZ PBSS4041NZ,115 9340 633 95115 PBSS4041NZ
PBSS4041NZ 技术支持
档案名称 标题 类型 格式
PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf