PBSS4140V 40V Low VCEsat NPN Transistor
NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V
产品特点 Features
- 300 mW total power dissipation
- Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
- Improved thermal behaviour due to flat leads
- Excellent coplanarity due to straight leads
- Low collector-emitter saturation voltage
- High current capabilities
- Reduced required PCB area
|
应用
- General purpose switching and muting
- LCD backlighting
- Supply line switching circuits
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
PBSS4140V |
PBSS4140V,115 |
9340 565 08115 |
量产 |
SOT666 |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT666 |
SOT666 |
plastic surface-mounted package; 6 leads |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
PBSS4140V |
PBSS4140V,115 |
9340 565 08115 |
PBSS4140V |
PBSS4140V 技术支持
档案名称 |
标题 |
类型 |
格式 |
PBSS4140V |
40V Low VCEsat NPN Transistor |
Data sheet |
pdf |
AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |