PBSS4260PANP 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.
产品特点 Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
|
应用
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
PBSS4260PANP |
PBSS4260PANP,115 |
9340 668 92115 |
量产 |
SOT1118
(DFN2020-6) |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT1118 |
DFN2020-6 |
plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
PBSS4260PANP |
PBSS4260PANP,115 |
9340 668 92115 |
PBSS4260PANP |
PBSS4260PANP 技术支持
档案名称 |
标题 |
类型 |
格式 |
PBSS4260PANP |
60 V, 2 A NPN/NPN low VCEsat (BISS) transistor |
Data sheet |
pdf |
75017064 |
Bipolar Power Product Selection Guide |
Selection guide |
pdf |