PBSS4612PA 12 V, 6 A NPN low V_CEsat (BISS) transistor
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP complement: PBSS5612PA
产品特点 Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Exposed heat sink for excellent thermal and electrical conductivity
- Leadless small SMD plastic package with medium power capability
|
应用
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
PBSS4612PA |
PBSS4612PA,115 |
9340 634 89115 |
量产 |
SOT1061
(DFN2020-3) |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT1061 |
DFN2020-3 |
plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
PBSS4612PA |
PBSS4612PA,115 |
9340 634 89115 |
PBSS4612PA |
PBSS4612PA 技术支持
档案名称 |
标题 |
类型 |
格式 |
PBSS4612PA |
12 V, 6 A NPN low V_CEsat (BISS) transistor |
Data sheet |
pdf |
AN10909 |
Low VCEsat transistors in medium power loadswitch applications |
Application note |
pdf |
AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |