PDTA115EM PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details).
产品特点 Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs
|
应用
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PDTA115EM |
PDTA115EM,315 |
9340 582 84315 |
量产 |
SOT883
(DFN1006-3) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT883 |
DFN1006-3 |
leadless ultra small plastic package; 3 solder lands |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PDTA115EM |
PDTA115EM,315 |
9340 582 84315 |
PDTA115EM |
PDTA115EM 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PDTA115EM |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm |
Datasheet |
pdf |
| AN10117 |
Medium Power Transistors and Rectifiers for Power Management Applications |
Application note |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
