PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTD113ZT

产品特点 Features
  • 500 mA output current capability
  • Reduces pick and place costs
  • Built-in bias resistors
  • ±10 % resistor ratio tolerance
  • Simplifies circuit design
  • AEC-Q101 qualified
  • Reduces component count
应用
  • Digital application in automotive and industrial segments
  • Cost-saving alternative for BC807 series in digital applications
  • Control of IC inputs
  • Switching loads
产品实物图
PDTB113ZT 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PDTB113ZT PDTB113ZT,215 9340 589 76215 量产 SOT23 (TO-236AB)
外形图
封装版本 封装名称 封装说明
SOT23 TO-236AB plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PDTB113ZT PDTB113ZT,215 9340 589 76215 PDTB113ZT
PDTB113ZT 技术支持
档案名称 标题 类型 格式
PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm Datasheet pdf
AN10117 Medium Power Transistors and Rectifiers for Power Management Applications Application note pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf