PDTC123ET NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
NPN resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details).
产品特点 Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs
|
应用
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PDTC123ET |
PDTC123ET,215 |
9340 546 97215 |
量产 |
SOT23
(TO-236AB) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT23 |
TO-236AB |
plastic surface-mounted package; 3 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PDTC123ET |
PDTC123ET,215 |
9340 546 97215 |
PDTC123ET |
PDTC123ET 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PDTC123ET |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Datasheet |
pdf |
| AN10117 |
Medium Power Transistors and Rectifiers for Power Management Applications |
Application note |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
