PDTD113ET NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm
500 mA NPN Resistor-Equipped Transistors (RET) family.
产品特点 Features
- Built-in bias resistors
- Reduces component count
- Simplifies circuit design
- Reduces pick and place costs
- 500 mA output current capability
- 10 % resistor ratio tolerance
|
应用
- Digital application in automotive and industrial segments
- Controlling IC inputs
- Cost saving alternative for BC817 series in digital applications
- Switching loads
产品实物图
|
封装
型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
PDTD113ET |
PDTD113ET,215 |
9340 589 75215 |
量产 |
SOT23
(TO-236AB) |
外形图
封装版本 |
封装名称 |
封装说明 |
SOT23 |
TO-236AB |
plastic surface-mounted package; 3 leads |
订货和供应
型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
PDTD113ET |
PDTD113ET,215 |
9340 589 75215 |
PDTD113ET |
PDTD113ET 技术支持
档案名称 |
标题 |
类型 |
格式 |
PDTD113ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm |
Datasheet |
pdf |
AN10117 |
Medium Power Transistors and Rectifiers for Power Management Applications |
Application note |
pdf |
75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |