ST 意法 NAND 型Flash 快闪存储器
Numonyx 恒忆于日前（2008年3月 - 4月份）正式成立的一个新品牌，中文名叫恒忆，于荷兰注册登记，总部设于瑞士，Numonyx 初期的主要营运将针对非挥发性内存提供系统服务并整合产品研发与制造，应用于DSC、MP3/PMP、手机、计算机等各项终端产品中。Numonyx 恒忆公司原由ST 意法半导体NANDFlash 存储器，Intel 英特尔NORFlash存储器和Francisco Partners合资组建的闪存半导体公司。目前ST持有48.1%的股权，Intel 持有45.1%，而FranciscoPartners则投资1.5亿美元，取得6.3%的股权。目前Numonyx主要营业项目可区分为两大主要区块，第一部份为系统设计服务，范围涵盖汽车用、消费性电子产品、工业用、计算机与周边配备、记忆卡制程与无线通讯技术等解决方案；第二部份则为储存技术相关技术与产品制造，内容包含NAND、NOR、MCP、PCM、记忆卡与软件应用开发。 2010年已被Micron 美光收购，但仍保留Numonyx 的品牌。
在非易失性内存产品行业,NAND闪存市场增长速度最快。由于各类多媒体系统产品对非易失性内存的容量、性能与成本的要求日益提高,NAND闪存的市场需求得到了强有力的推动。对于需要很大数据存储空间的应用,如数码相机和摄像机、个人数字助理（PDA）、MP3播放器和消费类数字设备（包括3G手机）,以及移动式存储介质（如优盘和闪卡等）,NAND闪存是理想的解决方案。
ST的NAND闪存系列面向范围不断扩展的诸多应用。这些应用往往要求不同的存储容量（从128Mbit到8Gbit及以上）,不同的页面尺寸（528B/264W和2112B/1056W）,并载有模块化接口。此外,它们还要求内存的尺寸不受存储容量影响,支持1.8伏和3伏输入电压,还有各种封装方式。
ST 意法 NAND型Flash快闪存储器订购型号:
Flash卡,CompactFlash (4)
| Generic Part Number |
Package |
Memory Size |
Array Organization |
Block Size |
Page Size |
Supply Voltage(Vcc) |
Supply Voltage(Vcc) |
Operating Ambient Temperature(Ta) |
Operating Ambient Temperature(Ta) |
Read Cycle Time |
Block Erase Time |
Page Program Time |
Write/Erase Cycles |
| SMC01GBF |
Compact Flash Card Type1 |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
| SMC02GBF |
Compact Flash Card Type1 |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
| SMC256BF |
Compact Flash Card Type1 |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
| SMC512BF |
Compact Flash Card Type1 |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
MCP, Flash NAND + LPSRAM
(4)
| Generic Part Number |
Package |
Memory Size |
Array Organization |
SRAM #1 Memory Size |
SRAM #1 Memory Organization |
Supply Voltage(Vcc) |
Supply Voltage(Vcc) |
Operating Ambient Temperature(Ta) |
Operating Ambient Temperature(Ta) |
| NAND01G-M |
LFBGA137 |
- |
- |
- |
- |
- |
- |
-30 |
85 |
| NAND01G-N |
TFBGA149 |
- |
- |
- |
- |
- |
- |
-30 |
85 |
| NAND256-M |
TFBGA149 |
- |
- |
- |
- |
- |
- |
-30 |
85 |
| NAND512-M |
TFBGA107; TFBGA149 |
- |
- |
- |
- |
- |
- |
-25 |
85 |
NAND MLC 大型页面 (1)
| Generic Part Number |
Package |
Status |
Memory Size |
Array Organization |
Block Size |
Page Size |
Supply Voltage(Vcc) |
Supply Voltage(Vcc) |
Operating Ambient Temperature(Ta) |
Operating Ambient Temperature(Ta) |
Read Cycle Time |
Block Erase Time |
Page Program Time |
Write/Erase Cycles |
Data Retention |
| NAND04GW3C2A |
TSOP-1 48 12x20 CU |
NRND |
4096 |
512Mbx8 |
264 |
2112 |
2.7 |
3.6 |
0 |
70 |
60 |
1.5 |
800 |
10000 |
10 |
NAND SLC 大型页面 (8)
| Generic Part Number |
Status |
Memory Size |
Array Organization |
Block Size |
Page Size |
Supply Voltage(Vcc) |
Supply Voltage(Vcc) |
Operating Ambient Temperature(Ta) |
Operating Ambient Temperature(Ta) |
Read Cycle Time |
Block Erase Time |
Page Program Time |
Write/Erase Cycles |
Data Retention |
| NAND01GR3B |
NRND |
1024 |
128Mbx8 |
132 |
2112 |
1.7 |
1.95 |
-40 |
85 |
60 |
2 |
300 |
100000 |
10 |
| NAND01GR3B2B |
Active |
1024 |
128Mbx8 |
132 |
2112 |
1.7 |
1.95 |
-40 |
85 |
50 |
2 |
200 |
100000 |
10 |
| NAND01GW3B |
Evaluation |
1024 |
128Mbx8 |
132 |
2112 |
2.7 |
3.6 |
-40 |
85 |
50 |
2 |
300 |
100000 |
10 |
| NAND01GW3B2B |
Active |
1024 |
128Mbx8 |
132 |
2112 |
2.7 |
3.6 |
-40 |
85 |
30 |
2 |
200 |
100000 |
10 |
| NAND02GR3B2C |
Evaluation |
2048 |
256Mbx8 |
132 |
2112 |
1.7 |
1.95 |
-40 |
85 |
50 |
2 |
200 |
100000 |
10 |
| NAND02GW3B2C |
Active |
2048 |
256Mbx8 |
132 |
2112 |
2.7 |
3.6 |
-40 |
85 |
30 |
2 |
200 |
100000 |
10 |
| NAND04GW3B2B |
Active |
4096 |
512Mbx8 |
132 |
2112 |
2.7 |
3.6 |
-40 |
85 |
30 |
2 |
200 |
100000 |
10 |
| NAND08GW3B2A |
Active |
8192 |
1Gbx8 |
132 |
2112 |
2.7 |
3.6 |
-40 |
85 |
30 |
2 |
200 |
100000 |
10 |
NAND SLC 小型页面 (8)
| Generic Part Number |
Package |
Memory Size |
Array Organization |
Block Size |
Page Size |
Supply Voltage(Vcc) |
Supply Voltage(Vcc) |
Operating Ambient Temperature(Ta) |
Operating Ambient Temperature(Ta) |
Read Cycle Time |
Block Erase Time |
Page Program Time |
Write/Erase Cycles |
Data Retention |
| NAND01GW3A2B-KGD |
TESTED UNSAWN WAFER STAT. V.I. |
1024 |
128Mbx8 |
16 |
528 |
2.7 |
3.6 |
-40 |
85 |
50 |
2 |
200 |
100000 |
10 |
| NAND128W3A |
TSOP-1 48 12x20 CU |
128 |
16Mbx8 |
16 |
528 |
2.7 |
3.6 |
-40 |
85 |
50 |
2 |
200 |
100000 |
10 |
| NAND256R3A |
VFBGA55 |
256 |
32Mbx8 |
16 |
528 |
1.7 |
1.95 |
-40 |
85 |
60 |
2 |
200 |
100000 |
10 |
| NAND256W3A |
TSOP-1 48 12x20 CU; VFBGA55 |
256 |
32Mbx8 |
16 |
528 |
2.7 |
3.6 |
-40 |
85 |
50 |
2 |
200 |
100000 |
10 |
| NAND512R3A |
VFBGA63 |
512 |
64Mbx8 |
16 |
528 |
1.7 |
1.95 |
-40 |
85 |
60 |
2 |
200 |
100000 |
10 |
| NAND512R3A2C |
VFBGA63 |
512 |
64Mbx8 |
16 |
528 |
1.7 |
1.95 |
-40 |
85 |
50 |
2 |
200 |
100000 |
10 |
| NAND512W3A |
TSOP-1 48 12x20 CU; VFBGA63 |
512 |
64Mbx8 |
16 |
528 |
2.7 |
3.6 |
-40 |
85 |
50 |
2 |
200 |
100000 |
10 |
| NAND512W3A2C |
TSOP-1 48 12x20 CU; VFBGA63 |
512 |
64Mbx8 |
16 |
528 |
2.7 |
3.6 |
-40 |
85 |
30 |
2 |
200 |
100000 |
10 |
