应用

• Low-frequency Amplifi er, muting circuit

技术特性

• High Collector-Emitter Sustaining Voltage
  VCEO(sus) = 100 Vdc (Min) 2N6338
  VCEO(sus) = 150 Vdc (Min) - 2N6341
• High DC Current Gain
  hFE = 30 - 120 @ IC = 10 Adc
  hFE = 12 (Min) @ IC = 25 Adc
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
  tr = 0.3 µs (Max)
  ts = 1.0 µs (Max)
  tf = 0.25 µs (Max)
• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

封装图 PACKAGE DIMENSIONS