2N6667:10 A, 60 V PNP Darlington Bipolar Power Transistor
The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.
技术特性
- High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc
- Collector-Emitter Sustaining Voltage @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) 2N6667
VCEO(sus) = 80 Vdc (Min) - 2N6668
- Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| 2N6667G |
Active |
Pb-free |
10 A, 60 V PNP Darlington Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
$0.4533 |
| 2N6667 |
Last Shipments |
|
10 A, 60 V PNP Darlington Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
|
|
封装图 PACKAGE DIMENSIONS
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