BD809:High Power NPN Bipolar Power Transistor
The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
技术特性
- DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| BD809G |
Active |
|
High Power NPN Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
$0.4533 |
| BD809 |
Last Shipments |
|
High Power NPN Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
|
数据资料DataSheet下载
