BDX53B:Medium Power NPN Darlington Bipolar Power Transistor

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

技术特性
  • High DC Current Gain
    hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector Emitter Sustaining Voltage @ 100 mAdc
    VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
  • VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
  • VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
引脚图 PIN CONNECTIONS

BDX53B引脚图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
BDX53BG Active Pb-free Medium Power NPN Darlington Bipolar Power Transistor TO-220-3 221A-09   Tube 50 $0.4307
BDX53B Last Shipments Medium Power NPN Darlington Bipolar Power Transistor TO-220-3 221A-09   Tube 50  
数据资料DataSheet下载
概述 版本信息 大小
BDX53B 数据资料DataSheet下载:pdf Rev.V2 2 页