BF493S:High Voltage PNP Bipolar Transistor
The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
技术特性
- High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
- Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package
- Pb-Free Package is Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| BF493SG |
Active |
|
High Voltage PNP Bipolar Transistor |
TO-92 |
29-11 |
|
Bulk Box |
5000 |
$0.12 |
数据资料DataSheet下载
