BUV21:40 A, 200V NPN Bipolar Power Transistor
The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.
技术特性
- High DC current gain: hFE min. = 20 at IC = 12 A
- Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
- Very fast switching times: TF max. = 0.4 µs at IC=25A
- Pb-Free Package is Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| BUV21G |
Active |
|
40 A, 200V NPN Bipolar Power Transistor |
TO-204-2 / TO-3-2 |
197A-05 |
|
Tray Foam |
100 |
$5.9759 |
数据资料DataSheet下载
