MBR4015LWT:3.0 A, 60 V Schottky Rectifier

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

技术特性
  • Highly Stable Oxide Passivated Junction
  • Guardring for Overvoltage Protection
  • Low Forward Voltage Drop
  • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating.
  • Full Electrical Isolation without Additional Hardware
  • Pb−Free Package is Available*
    Mechanical Characteristics
  • Case: Molded Epoxy
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • Weight: 4.3 Grams (Approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds
封装图 PACKAGE DIMENSIONS

MBR4015LWT封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MBR4015LWTG Active
Pb-free
40 A, 15 V Schottky Rectifier TO-247-3 340L-02 Tube 30 $3.6799
数据资料DataSheet下载
概述 文档编号/大小 版本
3.0 A, 60 V Schottky Rectifier MBR4015LWT-D(417.0kB) 1