MBRA210ET3:10 V, 2.0 A Low VF Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
技术特性
- Low IR, Extends Battery Life
- 1st in the Market Place with a 10 VR Schottky Rectifier
- Compact Package with J−Bend Leads Ideal for Automated Handling
- Highly Stable Oxide Passivated Junction
- Guardring for Over−Voltage Protection
- Optimized for Low Leakage Current
- Pb−Free Package is Available
Mechanical Characteristics
- Case: Molded Epoxy
- Epoxy Meets UL 94 V−0 @ 0.125 in
- Weight: 70 mg (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
- Polarity: Polarity Band Indicates Cathode Lead
- ESD Ratings:
Machine Model = C
Human Body Model = 3B
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
MBRA210ET3G |
Active |
AEC Qualified |
Pb-free |
Halide free |
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10 V, 2.0 A Low VF Schottky Rectifier |
SMA-2 |
403D-02 |
1 |
Tape and Reel |
5000 |
$0.1785 |
MBRA210ET3 |
Last Shipments |
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10 V, 2.0 A Low VF Schottky Rectifier |
SMA-2 |
403D-01 |
1 |
Tape and Reel |
5000 |
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