MBRA210ET3:10 V, 2.0 A Low VF Schottky Rectifier

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

技术特性
  • Low IR, Extends Battery Life
  • 1st in the Market Place with a 10 VR Schottky Rectifier
  • Compact Package with J−Bend Leads Ideal for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Guardring for Over−Voltage Protection
  • Optimized for Low Leakage Current
  • Pb−Free Package is Available
    Mechanical Characteristics
  • Case: Molded Epoxy
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • Weight: 70 mg (Approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
  • Polarity: Polarity Band Indicates Cathode Lead
  • ESD Ratings:
    Machine Model = C
    Human Body Model = 3B
封装图 PACKAGE DIMENSIONS

MBRA210ET3封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MBRA210ET3G Active
AEC Qualified
Pb-free
Halide free
10 V, 2.0 A Low VF Schottky Rectifier SMA-2 403D-02 1 Tape and Reel 5000 $0.1785
MBRA210ET3 Last Shipments
10 V, 2.0 A Low VF Schottky Rectifier SMA-2 403D-01 1 Tape and Reel 5000  
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概述 文档编号/大小 版本
10 V, 2.0 A Low VF Schottky Rectifier MBRA210ET3-D(417.0kB) 1