MBRAF2H100:2.0 A, 100 V Schottky Rectifier
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
技术特性
- Low Profile Package for Space Constrained Applications
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- 150°C Operating Junction Temperature
- Guard−Ring for Stress Protection
- These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
- Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
- Weight: 95 mg (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
- Cathode Polarity Band
- Device Meets MSL 1 Requirements
- ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MBRAF2H100T3G |
Active |
| AEC Qualified |
| Pb-free |
| Halide free |
|
2.0 A, 100 V Schottky Rectifier |
SMA FL |
403AA |
1 |
Tape and Reel |
5000 |
$0.1193 |
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