MBRD5H100T4G:100 V, 5 A Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
技术特性
- Guardring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- Epoxy Meets UL 94 V-0 @ 0.125 in
- Short Heat Sink Tab Manufactured - Not Sheared!
- This is a Pb-Free Device
- NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
- AEC-Q101 Qualified and PPAP Capable
应用
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终端产品
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MBRD5H100T4G |
Active |
|
100 V, 5 A Schottky Rectifier |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.5 |
| NBRD5H100T4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
|
100 V, 5 A Schottky Rectifier |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.6 |
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