MBRF2545CT:45 V, 25 A Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
技术特性
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Matched Dual Die Construction
- High Junction Temperature Capability
- High dv/dt Capability
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guardring for Stress Protection
- Epoxy Meets UL 94 V-0 @ 0.125 in
- Electrically Isolated
- No Isolation Hardware Required
- Pb-Free Package is Available*
Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 1.9 Grams (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
- Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MBRF2545CTG |
Active |
|
45 V, 25 A Schottky Rectifier |
TO-220 FULLPAK-3 |
221D-03 |
|
Tube |
50 |
$1.04 |
| MBRF2545CT |
Last Shipments |
|
45 V, 25 A Schottky Rectifier |
TO-220 FULLPAK-3 |
221D-03 |
|
Tube |
50 |
|
数据资料DataSheet下载
