MBRS410ET3: 10 V, 4.0 A Schottky Rectifier
This device employs the Schottky Barrier principles in a large area metal-to-silicon power diode.
技术特性
- Very Low VF Accompanied by Low IR
- 1st in the Market Place with a 10 VR Schottky Rectifier
- Small Compact Surface Mountable Package with J−Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Designed for Low Leakage
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guard−Ring for Stress Protection
- Pb−Free Package is Available
Mechanical Characteristics
- Case: Epoxy, Molded
- Weight: 217 mg (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
- Polarity: Notch in Plastic Body Indicates Cathode Lead
- ESD Ratings:
Machine Model = C
Human Body Model = 3B
| 封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
MBRS410ET3G |
Active |
AEC Qualified |
Pb-free |
Halide free |
|
10 V, 4.0 A Schottky Rectifier |
SMC-2 |
403-03 |
1 |
Tape and Reel |
2500 |
$0.6822 |
MBRS410ET3 |
Last Shipments |
|
10 V, 4.0 A Schottky Rectifier |
SMC-2 |
403-03 |
1 |
Tape and Reel |
2500 |
|
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