MJD148:NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

技术特性
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
  • High Gain - 50 Min @ IC = 2.0 Amps
  • Low Saturation Voltage - 0.5 V @ IC = 2.0 Amps High Current Gain-Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • This is a PbFree Device
封装图 PACKAGE DIMENSIONS

MJD148封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJD148T4G Active
Pb-free
Halide free
NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500 $0.36
NJVMJD148T4G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500 $0.3763
MJD148T4 Last Shipments  NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500  
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概述 文档编号/大小 版本
NPN Bipolar Power Transistor MJD148-D(417.0kB) 3