MJD31:3.0 A, 40 V NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.

技术特性
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages
封装图 PACKAGE DIMENSIONS

MJD31封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJD31T4G Active
Pb-free
Halide free
3.0 A, 40 V NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500 $0.2
NJVMJD31T4G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
3.0 A, 40 V NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500 $0.2091
MJD31T4 Last Shipments  3.0 A, 40 V NPN Bipolar Power Transistor DPAK-3 369C 1 Tape and Reel 2500  
数据资料DataSheet下载
概述 文档编号/大小 版本
3.0 A, 40 V NPN Bipolar Power Transistor MJD31-D(417.0kB) 3