MJE15032 8.0 A, 250 V NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.
技术特性
- DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
- High DC Current Gain
hFE = 40 (Min) @ IC= 200 mAdc
hFE= 15 (Min) @ IC = 1.0 Adc
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("-1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
- High Current-Gain-Bandwith Product -
fT = 40MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These are PbFree Packages
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封装图 MARKING DIAGRAM
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订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
NJVMJE15032T4G |
Active |
AEC Qualified |
PPAP Capable |
Pb-free |
Halide free |
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8.0 A, 250 V NPN Bipolar Power Transistor |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.2787
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MJE15032 |
Last Shipments |
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8.0 A, 250 V NPN Bipolar Power Transistor |
DPAK-3 |
369C |
1 |
Tube |
75 |
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