MJE15034 4.0 A, 350 V NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.

技术特性
  • DC Current Gain Specified to 4.0 Amperes
    hFE = 40 (Min) @ IC = 3.0 Adc
    hFE = 20 (Min) @ IC = 4.0 Adc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage - 
    ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages
封装图 MARKING DIAGRAM

MJE15034 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MJE15034G Active Pb-free 4.0 A, 350 V NPN Bipolar Power Transistor TO-220-3 221A-09   Tube 50 $0.532
MJE15034 Last Shipments 4.0 A, 350 V NPN Bipolar Power Transistor TO-220-3 221A-09   Tube 50  
数据资料DataSheet下载
概述 版本信息 大小
MJE15034 数据资料DataSheet下载:pdf Rev.V2 2 页